Electronic transport in disordered graphene antidot lattice devices

Electronic properties of disordered graphene antidot lattices

Shengjun Yuan,1,* Rafael Roldán,2,† Antti-Pekka Jauho,3 and M. I. Katsnelson1 1Radboud University of Nijmegen, Institute for Molecules and Materials, Heijendaalseweg 135, 6525 AJ Nijmegen, The Netherlands 2Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco E28049 Madrid, Spain 3Center for Nanostructured Graphene (CNG), DTU Nanotech, Department of Microand Nanotechnology, Technical ...

Abnormal Electronic Transport in Disordered Graphene Nanoribbon

We investigate the conductivity σ of graphene nanoribbons with zigzag edges as a function of Fermi energy EF in the presence of the impurities with different potential range. The dependence of σ(EF ) displays four different types of behavior, classified to different regimes of length scales decided by the impurity potential range and its density. Particularly, low density of long range impuriti...

Charge transport gap in graphene antidot lattices

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Electronic properties of graphene antidot lattices

Graphene antidot lattices constitute a novel class of nano-engineered graphene devices with controllable electronic and optical properties. An antidot lattice consists of a periodic array of holes that causes a band gap to open up around the Fermi level, turning graphene from a semimetal into a semiconductor. We calculate the electronic band structure of graphene antidot lattices using three nu...

Screening and Collective Modes in Disordered Graphene Antidot Lattices